| PART |
Description |
Maker |
| K4B1G1646E |
1Gb E-die DDR3 SDRAM
|
Samsung
|
| EBJ10UE8BDF0-AE-F EBJ10UE8BDF0-DJ-F EBJ10UE8BDF0-G |
1GB Unbuffered DDR3 SDRAM DIMM
|
Elpida Memory
|
| EBJ10EE8BAWA-8C-E EBJ10EE8BAWA-AE-E EBJ10EE8BAWA-D |
1GB Unbuffered DDR3 SDRAM DIMM
|
Elpida Memory
|
| IS46TR16640ED-125KBLA2 IS46TR16640ED-125KBLA3 IS46 |
128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC
|
Integrated Silicon Solu...
|
| W3EG72125S335AJD3 W3EG72125S202JD3 W3EG72125S263AJ |
1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL 1GB 2x64Mx72 ECC的DDR SDRAM的注册瓦锁相
|
Amphenol, Corp.
Toshiba, Corp.
|
| ST62P20CM3/XXX ST62P10CM6/XXX ST62P10CM1/XXX ST62P |
8-BIT MICROCONTROLLER
IC, SDRAM, DDR400, 16MEGX16
1GB DDR SDRAM SODIMM 8位微控制
|
Exar, Corp.
|
| EBE10RD4ABFA |
1GB Registered DDR2 SDRAM DIMM (128M words x 72 bits, 1 Rank) 1GB的注册DDR2 SDRAM DIMM内存28M的字× 72位，1个等级）
|
Elpida Memory, Inc.
|
| HYMP564S648-E3 HYMP564S648-C4 HYMP532S646-E3 HYMP5 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver.
DDR2 SDRAM - SO DIMM 256MB
DDR2 SDRAM - SO DIMM 512MB
DDR2 SDRAM - SO DIMM 1GB
|
HYNIX[Hynix Semiconductor]
|
| MT41J256M8 MT41J128M16 MT41J128M16HA-15EDTR MT41J1 |
DDR3 SDRAM MT41J512M4 64 Meg x 4 x 8 Banks MT41J256M8 32 Meg x 8 x 8 Banks MT41J128M16 16 Meg x 16 x 8 Banks
2Gb: x4, x8, x16 DDR3 SDRAM Features
DDR3 SDRAM MT41J512M4 ?64 Meg x 4 x 8 Banks MT41J256M8 ?32 Meg x 8 x 8 Banks MT41J128M16 ?16 Meg x 16 x 8 Banks
|
Micron Technology
|
| HMT41GS6MFR8C |
DDR3 SDRAM
|
Hynix Semiconductor
|
| MT41J256M16 MT41J512M8 |
DDR3 SDRAM
|
Micon
|
| HY5PS1G431F-Y5 HY5PS1G831F-Y5 HY5PS1G431F-Y6 HY5PS |
DDR2 SDRAM - 1Gb
|
Hynix Semiconductor
|
